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Grandis holds a unique, broad patent portfolio, including key fundamental and practical implementation patents, covering STT-RAM, circuit design, device integration and systems, derived from early intensive and dedicated research in spintronics. It has 62 U.S. patents issued, more than 78 worldwide patents pending, and continues to patent its technology. It licenses its IP to technology companies that design, develop and manufacture a variety of products incorporating stand-alone and embedded STT-RAM memory. Grandis has also assembled a strong international technical team with a proven track record in magnetic thin film and semiconductor memory technology. The team’s extensive experience covers spintronics, magnetics and conventional MRAM, as well as SRAM, DRAM and Flash. It offers its licensees a complete range of support services from process installation through qualification.

The following is a list of Grandis’ issued U.S. patents:

 

PAT. No.

Title

1

7,859,034

Magnetic devices having oxide antiferromagnetic layer next to free ferromagnetic layer

2

7,851,840

Devices and circuits based on magnetic tunnel junctions utilizing a multilayer barrier

3

7,821,088

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plan equilibrium magnetization

4

7,821,087

Spin transfer magnetic element having low saturation magnetization free layers

5

7,800,942

Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory

6

7,791,931

Current driven memory cells having enhanced current and enhanced current symmetry

7

7,777,261

Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory

8

7,764,536

Magnetic device having stabilized free ferromagnetic layer

9

7,760,474

Magnetic element utilizing free layer engineering

10

7,742,328

Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors

11

7,738,287

Method and system for providing field biased magnetic memory devices

12

7,663,848

Magnetic memories utilizing a magnetic element having an engineered free layer

13

7,623,369

Method and system for providing a magnetic memory structure utilizing spin transfer

14

7,576,956

Magnetic tunnel junction having diffusion stop layer

15

7,532,505

Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements

16

7,531,882

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

17

7,518,835

Magnetic elements having a bias field and magnetic memory devices using the magnetic elements

18

7,515,457

Current driven memory cells having enhanced current and enhanced current symmetry

19

7,502,249

Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements

20

7,495,303

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

21

7,489,541

Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements

22

7,486,552

Method and system for providing a spin transfer device with improved switching characteristics

23

7,486,551

Magnetic element using domain-wall assisted switching of magnetization and MRAM devices using the magnetic element

24

7,430,135

Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density

25

7,379,327

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins

26

7,369,427

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

27

7,345,912

Method and system for providing a magnetic memory structure utilizing spin transfer

28

7,289,356

Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein

29

7,286,395

Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells

30

7,282,755

Stress assisted current driven switching for magnetic memory applications

31

7,272,035

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

32

7,272,034

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

33

7,245,462

Magnetoresistive element having reduced spin transfer induced noise

34

7,242,048

Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

35

7,242,045

Spin transfer magnetic element having low saturation magnetization free layers

36

7,241,631

MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

37

7,233,039

Spin transfer magnetic elements with spin depolarization layers

38

7,230,845

Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices

39

7,227,773

Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element

40

7,224,601

Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element

41

7,190,612

Circuitry for use in current switching a magnetic cell

42

7,190,611

Spin-transfer multilayer stack containing magnetic layers with resettable magnetization

43

7,187,577

Method and system for providing current balanced writing for memory cells and magnetic devices

44

7,161,829

Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements

45

7,126,202

Spin scattering and heat assisted switching of a magnetic element

46

7,110,287

Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer

47

7,106,624

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

48

7,098,494

Re-configurable logic elements using heat assisted magnetic tunneling elements

49

7,088,609

Spin barrier enhanced magneto-resistance effect element and magnetic memory using the same

50

7,057,921

Spin barrier enhanced dual magneto-resistance effect element and magnetic memory using the same

51

7,009,877

Three-terminal magneto-statically coupled spin transfer-based MRAM cell

52

6,992,359

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

53

6,985,385

Magnetic memory element utilizing spin transfer switching and storing multiple bits

54

6,967,863

Perpendicular magnetization magnetic element utilizing spin transfer

55

6,958,927

Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element

56

6,933,155

Methods for providing a sub .15 micron magnetic memory structure

57

6,920,063

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

58

6,888,742

Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element

59

6,847,547

Magneto-statically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

60

6,838,740

Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

61

6,829,161

Magneto-statically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

62

6,714,444

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

 

     
 
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