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Grandis holds a unique, broad patent portfolio, including key fundamental and practical implementation patents, covering STT-RAM, circuit design, device integration and systems, derived from early intensive and dedicated research in spintronics. It has 38 U.S. patents issued, more than 35 U.S. patents pending, and continues to patent its technology. It licenses its IP to technology companies that design, develop and manufacture a variety of products incorporating stand-alone and embedded STT-RAM memory. Grandis has also assembled a strong international technical team with a proven track record in magnetic thin film and semiconductor memory technology. The team’s extensive experience covers spintronics, magnetics and conventional MRAM, as well as SRAM, DRAM and Flash. It offers its licensees a complete range of support services from process installation through qualification.
The following is a list of Grandis’ issued U.S. patents:
|
PAT. No. |
Title |
1 |
7,379,327 |
Current Driven Switching of Magnetic Storage Cells Utilizing Spin Transfer and Magnetic
Memories Using Such Cells Having Enhanced Read and Write Margins
|
2 |
7,369,427 |
Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements |
3 |
7,345,912 |
Method and system for providing a magnetic memory structure utilizing spin transfer |
4 |
7,289,356 |
Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein |
5 |
7,286,395 |
Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells |
6 |
7,282,755 |
Stress assisted current driven switching for magnetic memory applications |
7 |
7,272,035 |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells |
8 |
7,272,034 |
Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells |
9 |
7,245,462 |
Magnetoresistive element having reduced spin transfer induced noise |
10 |
7,242,048 |
Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements |
11 |
7,242,045 |
Spin transfer magnetic element having low saturation magnetization free layers |
12 |
7,241,631 |
MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements |
13 |
7,233,039 |
Spin transfer magnetic elements with spin depolarization layers |
14 |
7,230,845 |
Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices |
15 |
7,227,773 |
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element |
16 |
7,224,601 |
Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element |
17 |
7,190,612 |
Circuitry for use in current switching a magnetic cell |
18 |
7,190,611 |
Spin-transfer multilayer stack containing magnetic layers with resettable magnetization |
19 |
7,187,577 |
Method and system for providing current balanced writing for memory cells and magnetic devices |
20 |
7,161,829 |
Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements |
21 |
7,126,202 |
Spin scattering and heat assisted switching of a magnetic element |
22 |
7,110,287 |
Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer |
23 |
7,106,624 |
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element |
24 |
7,098,494 |
Re-configurable logic elements using heat assisted magnetic tunneling elements |
25 |
7,088,609 |
Spin barrier enhanced magneto-resistance effect element and magnetic memory using the same |
26 |
7,057,921 |
Spin barrier enhanced dual magneto-resistance effect element and magnetic memory using the same |
27 |
7,009,877 |
Three-terminal magneto-statically coupled spin transfer-based MRAM cell |
28 |
6,992,359 |
Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization |
29 |
6,985,385 |
Magnetic memory element utilizing spin transfer switching and storing multiple bits |
30 |
6,967,863 |
Perpendicular magnetization magnetic element utilizing spin transfer |
31 |
6,958,927 |
Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element |
32 |
6,933,155 |
Methods for providing a sub .15 micron magnetic memory structure |
33 |
6,920,063 |
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element |
34 |
6,888,742 |
Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element |
35 |
6,847,547 |
Magneto-statically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element |
36 |
6,838,740 |
Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element |
37 |
6,829,161 |
Magneto-statically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element |
38 |
6,714,444 |
Magnetic element utilizing spin transfer and an MRAM device using the magnetic element |
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