PAT. No.

Title

1

7,764,536

Method and system for providing a sense amplifier and drive circuit for spin transfer torque magnetic random access memory

2

7,760,474

Magnetic element utilizing free layer engineering

3

7,742,328

Method and system for providing spin transfer tunneling magnetic memories utilizing non-planar transistors

4

7,738,287

Method and system for providing field biased magnetic memory devices

5

7,663,848

Magnetic memories utilizing a magnetic element having an engineered free layer

6

7,623,369

Method and system for providing a magnetic memory structure utilizing spin transfer

7

7,576,956

Magnetic tunnel junction having diffusion stop layer

8

7,532,505

Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements

9

7,531,882

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

10

7,518,835

Magnetic elements having a bias field and magnetic memory devices using the magnetic elements

11

7,515,457

Current driven memory cells having enhanced current and enhanced current symmetry

12

7,502,249

Method and system for using a pulsed field to assist spin transfer induced switching of magnetic memory elements

13

7,495,303

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

14

7,489,541

Spin-transfer switching magnetic elements using ferrimagnets and magnetic memories using the magnetic elements

15

7,486,552

Method and system for providing a spin transfer device with improved switching characteristics

16

7,486,551

Magnetic element using domain-wall assisted switching of magnetization and MRAM devices using the magnetic element

17

7,430,135

Current-switched spin-transfer magnetic devices with reduced spin-transfer switching current density

18

7,379,327

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells having enhanced read and write margins

19

7,369,427

Magnetic elements with spin engineered insertion layers and MRAM devices using the magnetic elements

20

7,345,912

Method and system for providing a magnetic memory structure utilizing spin transfer

21

7,289,356

Fast magnetic memory devices utilizing spin transfer and magnetic elements used therein

22

7,286,395

Current driven switched magnetic storage cells having improved read and write margins and magnetic memories using such cells

23

7,282,755

Stress assisted current driven switching for magnetic memory applications

24

7,272,035

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

25

7,272,034

Current driven switching of magnetic storage cells utilizing spin transfer and magnetic memories using such cells

26

7,245,462

Magnetoresistive element having reduced spin transfer induced noise

27

7,242,048

Magnetic elements with ballistic magnetoresistance utilizing spin-transfer and an MRAM device using such magnetic elements

28

7,242,045

Spin transfer magnetic element having low saturation magnetization free layers

29

7,241,631

MTJ elements with high spin polarization layers configured for spin-transfer switching and spintronics devices using the magnetic elements

30

7,233,039

Spin transfer magnetic elements with spin depolarization layers

31

7,230,845

Magnetic devices having a hard bias field and magnetic memory devices using the magnetic devices

32

7,227,773

Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element

33

7,224,601

Oscillating-field assisted spin torque switching of a magnetic tunnel junction memory element

34

7,190,612

Circuitry for use in current switching a magnetic cell

35

7,190,611

Spin-transfer multilayer stack containing magnetic layers with resettable magnetization

36

7,187,577

Method and system for providing current balanced writing for memory cells and magnetic devices

37

7,161,829

Current confined pass layer for magnetic elements utilizing spin-transfer and an MRAM device using such magnetic elements

38

7,126,202

Spin scattering and heat assisted switching of a magnetic element

39

7,110,287

Method and system for providing heat assisted switching of a magnetic element utilizing spin transfer

40

7,106,624

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

41

7,098,494

Re-configurable logic elements using heat assisted magnetic tunneling elements

42

7,088,609

Spin barrier enhanced magneto-resistance effect element and magnetic memory using the same

43

7,057,921

Spin barrier enhanced dual magneto-resistance effect element and magnetic memory using the same

44

7,009,877

Three-terminal magneto-statically coupled spin transfer-based MRAM cell

45

6,992,359

Spin transfer magnetic element with free layers having high perpendicular anisotropy and in-plane equilibrium magnetization

46

6,985,385

Magnetic memory element utilizing spin transfer switching and storing multiple bits

47

6,967,863

Perpendicular magnetization magnetic element utilizing spin transfer

48

6,958,927

Magnetic element utilizing spin-transfer and half-metals and an MRAM device using the magnetic element

49

6,933,155

Methods for providing a sub .15 micron magnetic memory structure

50

6,920,063

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element

51

6,888,742

Off-axis pinned layer magnetic element utilizing spin transfer and an MRAM device using the magnetic element

52

6,847,547

Magneto-statically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

53

6,838,740

Thermally stable magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

54

6,829,161

Magneto-statically coupled magnetic elements utilizing spin transfer and an MRAM device using the magnetic element

55

6,714,444

Magnetic element utilizing spin transfer and an MRAM device using the magnetic element