Grandis’ proprietary Spin Transfer Torque RAM (STT-RAM™) technology, derived from cutting-edge research in spintronics, has all the characteristics of a “universal memory”.

Learn why Grandis' innovative STT-RAM technology was selected for this prestigious award.

STT-RAM combines the capacity and cost benefits of DRAM, the fast read and write performance of SRAM, and the non-volatility of Flash, coupled with essentially unlimited endurance. Its performance exceeds that of other prospective non-volatile memory technologies, and it solves the key drawbacks of first-generation, field-switched MRAM. It has excellent write selectivity, excellent scalability beyond the 45 nm technology node, low power consumption, and a simpler architecture and manufacturing process than first-generation MRAM.

Spin-transfer torque (STT) switching is a new physics phenomenon that was theoretically predicted in 1996 and first demonstrated in metallic thin films as recently as 2000. Although STT switching currents were initially orders of magnitude too high for application in practical devices, Grandis was founded in 2002 with the goal of developing a novel non-volatile memory technology that applies the many benefits of STT switching to magnetic tunnel junctions (MTJs). Researchers at Grandis undertook pioneering research in spintronics and pursued new magnetic materials and innovative MTJ structures to lower STT switching currents. Through these advances in materials research, coupled with its extensive modeling, simulation, integration, cell architecture, circuit and system design capabilities, Grandis has developed a package that enables its licensees to incorporate stand-alone or embedded STT-RAM non-volatile memory into their products.